Congratulations Juan Carlos !
The PhD Student Juan Carlos Gonzalez-Rosillo has defended his PhD thesis:
Title: Volume resistive switching in metallic perovskite oxides driven by the metal-insulator transition
Date: Friday 19th May
Time: 11:30 am
Place: Auditorium of the Centre de Recerca Matematica (CRM) at the Facultat de Ciències-UAB
Abstract: Resistive-Random Access Memories (RRAM) are one of the most promising candidates to overcome the limitations of actual data storage technologies, due to their excellent performance. They are based on the Resistive Switching effect (RS), where the application of an electric field produces a reversible, non-volatile change in the resistance between two or more resistive states. In transition metal oxides, the motion of oxygen is widely accepted to play a key role in their outstanding properties. However, the exact mechanism governing this effect is material-dependent and for some of them it is still far to be understood. In this thesis, we present a novel Resistive Switching mechanism based on the Metal-Insulator Transition (MIT) in metallic perovskite oxides with strong electron-electron interaction. We analyse the RS behaviour of three different families of metallic perovskites: La1-xSrxMnO3, YBa2Cu3O7-x and RENiO3 and demonstrate that the MIT of these mixed electronic-ionic conductors can be tuned upon the application of an electric field, being able to transform the entire bulk volume.
Supervisors:
Prof. Teresa Puig (SUMAN group, ICMAB)
Dr. Anna Palau (SUMAN group, ICMAB)
PhD committee:
President: Prof. Jordi Suñé (UAB)
Secretary: Javier E. Villegas (CNRS-Thales)
Vocal: Prof. Regina Dittmann (Forschungszentrum Jülich)
